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 Freescale Semiconductor Technical Data
Document Number: MMG3013NT1 Rev. 2, 8/2005
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3013NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small -signal RF. Features * Frequency: 0 -6000 MHz * P1dB: 20.5 dBm @ 900 MHz * Small-Signal Gain: 20 dB @ 900 MHz * Third Order Output Intercept Point: 36 dBm @ 900 MHz * Single 5 Volt Supply * Internally Matched to 50 Ohms * Low Cost SOT -89 Surface Mount Package * Pb -Free and RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MMG3013NT1
0 -6000 MHz, 20 dB 20.5 dBm InGaP HBT
12
3
CASE 1514-01, STYLE 1 SOT-89 PLASTIC
Table 1. Typical Performance (1)
Characteristic Small-Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @1dB Compression Third Order Output Intercept Point Symbol Gp IRL ORL P1db IP3 900 MHz 20 -17 -11 20.5 36 2140 MHz 17 -19 -9 20.5 34 3500 MHz 14.5 -15 -12 19 32 Unit dB dB dB dBm dBm
Table 2. Maximum Ratings
Rating Supply Voltage Supply Current
(2) (2)
Symbol VCC ICC Pin Tstg TJ
Value 7 300 12 -65 to +150 150
Unit V mA dBm C C
RF Input Power Storage Temperature Range Junction Temperature (3)
2. Continuous voltage and current applied to device. 3. For reliable operation, the junction temperature should not exceed 150C.
1. VCC = 5 Vdc, TC = 25C, 50 ohm system
Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 90 mA, TC = 25C)
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (4) 42 Unit C/W
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MMG3013NT1 1
RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25C, 50 ohm system, in Freescale Application Circuit)
Characteristic Small-Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure Supply Current (1) Supply Voltage
(1)
Symbol 900 MHz 2140 MHz Gp IRL ORL P1dB IP3 NF ICC VCC
Min 19.3 16 -- -- -- -- -- 80 --
Typ 20 17 -17 -11 20.5 36 4 90 5
Max -- -- -- -- -- -- -- 110 --
Unit dB dB dB dBm dBm dB mA V
1. For reliable operation, the junction temperature should not exceed 150C.
MMG3013NT1 2 RF Device Data Freescale Semiconductor
Table 5. Functional Pin Description
Pin Number 1 2 3 RFin Ground RFout/DC Supply 1 2 3 Pin Function 2
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD 22-A114) Machine Model (per EIA/JESD 22-A115) Charge Device Model (per JESD 22-C101) Class 1A (Minimum) A (Minimum) IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology Per JESD 22-A113, IPC/JEDEC J-STD-020 Rating 1 Package Peak Temperature 260 Unit C
MMG3013NT1 RF Device Data Freescale Semiconductor 3
50 OHM TYPICAL CHARACTERISTICS
25 Gp, SMALL-SIGNAL GAIN (dB) TC = 85C 20 -40C 25C S11, S22 (dB) 0 S22 -10
-20 S11 -30
15
VCC = 5 Vdc 10 0 1 2 f, FREQUENCY (GHz) 3 4 -40 0 1 2 f, FREQUENCY (GHz) 3
VCC = 5 Vdc ICC = 90 mA 4
Figure 2. Small -Signal Gain (S21) versus Frequency
Figure 3. Input/Output Return Loss versus Frequency
23 P1dB, 1 dB COMPRESSION POINT (dBm) 21 Gp, SMALL-SIGNAL GAIN (dB) 19 1960 MHz 17 15 13 11 9 10 12 14 16 18 20 Pout, OUTPUT POWER (dBm) VCC = 5 Vdc ICC = 90 mA 2600 MHz 3500 MHz 900 MHz 2140 MHz
23 22 21 20 19 18 17 16 0.5 1 1.5 2 2.5 3 3.5 f, FREQUENCY (GHz) VCC = 5 Vdc ICC = 90 mA
Figure 4. Small -Signal Gain versus Output Power
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 180 ICC, COLLECTOR CURRENT (mA) 160 140 120 100 80 60 40 20 0 4 4.2 4.4 4.6 4.8 5 5.2 5.4 VCC, COLLECTOR VOLTAGE (V) 39
Figure 5. P1dB versus Frequency
36
33
30 VCC = 5 Vdc ICC = 90 mA 1 MHz Tone Spacing 0 1 2 f, FREQUENCY (GHz) 3 4
27
24
Figure 6. Collector Current versus Collector Voltage
Figure 7. Third Order Output Intercept Point versus Frequency
MMG3013NT1 4 RF Device Data Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 39 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 38 37 36 35 34 33 32 31 -40 VCC = 5 Vdc f = 900 MHz 1 MHz Tone Spacing -20 0 20 40 60 80 100
36
33
30
27 f = 900 MHz 1 MHz Tone Spacing 24 4.9 4.95 5 5.05 5.1 VCC, COLLECTOR VOLTAGE (V)
T, TEMPERATURE (_C)
Figure 8. Third Order Output Intercept Point versus Collector Voltage
Figure 9. Third Order Output Intercept Point versus Case Temperature
-30 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -40 MTTF (YEARS) VCC = 5 Vdc ICC = 90 mA f = 900 MHz 1 MHz Tone Spacing
105
-50
104
-60
-70
-80 5 8 11 14 17 20 Pout, OUTPUT POWER (dBm)
103 120 125 130 135 140 145 150 TJ, JUNCTION TEMPERATURE (C) NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 90 mA
Figure 10. Third Order Intermodulation versus Output Power
Figure 11. MTTF versus Junction Temperature
ACPR, ADJACENT CHANNEL POWER RATIO (dB)
8
-20 VCC = 5 Vdc, ICC = 90 mA, f = 2140 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF)
NF, NOISE FIGURE (dB)
6
-30
-40
4
-50
2 VCC = 5 Vdc ICC = 90 mA 0 0 1 2 f, FREQUENCY (GHz) 3 4
-60
-70 6 8 10 12 14 16 18 Pout, OUTPUT POWER (dBm)
Figure 12. Noise Figure versus Frequency
Figure 13. Single -Carrier W-CDMA Adjacent Channel Power Ratio versus Output Power MMG3013NT1
RF Device Data Freescale Semiconductor
5
50 OHM APPLICATION CIRCUIT: 40-800 MHz
VSUPPLY
R1
C3 L1 RF INPUT DUT
C4
Z1 C1
Z2
Z3
Z4 C2 Z4 PCB
Z5
RF OUTPUT
VCC
Z1, Z5 Z2 Z3
0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip
0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 14. 50 Ohm Test Circuit Schematic
30 S21 20 R1 S21, S11, S22 (dB) 10 0 -10 -20 S11 -30 -40 0 200 400 f, FREQUENCY (MHz) 600 800 VCC = 5 Vdc ICC = 90 mA MMG30XX Rev 2 C1 C4 C3 L1 S22 C2
Figure 15. S21, S11 and S22 versus Frequency
Figure 16. 50 Ohm Test Circuit Component Layout
Table 8. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2 C3 C4 L1 R1 Description 0.01 F Chip Capacitors 0.1 F Chip Capacitor 1 F Chip Capacitor 470 nH Chip Inductor 0 W Chip Resistor Part Number 0603A103JAT2A 0603A102JAT2A 0603A105JAT2A BK2125HM471 ERJ3GEY0R00V Manufacturer AVX AVX AVX Taiyo Yuden Panasonic
MMG3013NT1 6 RF Device Data Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 800-3600 MHz
VSUPPLY
R1
C3 L1 RF INPUT DUT
C4
Z1 C1
Z2
Z3
Z4 C2 Z4 PCB
Z5
RF OUTPUT
VCC
Z1, Z5 Z2 Z3
0.347 x 0.058 Microstrip 0.575 x 0.058 Microstrip 0.172 x 0.058 Microstrip
0.403 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1
Figure 17. 50 Ohm Test Circuit Schematic
30 20 S21, S11, S22 (dB) 10 0 -10 -20 S11 -30 800 1200 1600 2000 2400 2800 S22 C1 L1 C2 S21
R1 C4 C3
VCC = 5 Vdc ICC = 90 mA 3200 3600
MMG30XX Rev 2
f, FREQUENCY (MHz)
Figure 18. S21, S11 and S22 versus Frequency
Figure 19. 50 Ohm Test Circuit Component Layout
Table 9. 50 Ohm Test Circuit Component Designations and Values
Part C1, C2 C3 C4 L1 R1 Description 150 pF Chip Capacitors 0.1 F Chip Capacitor 1 F Chip Capacitor 56 nH Chip Inductor 0 W Chip Resistor Part Number 0603A151JAT2A 0603A102JAT2A 0603A105JAT2A HK160856NJ-T ERJ3GEY0R00V Manufacturer AVX AVX AVX Taiyo Yuden Panasonic
MMG3013NT1 RF Device Data Freescale Semiconductor 7
50 OHM TYPICAL CHARACTERISTICS
Table 10. Class A Common Emitter S -Parameters at VCC = 5 Vdc, ICC = 90 mA, TC = 255C
f GHz 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4 1.45 1.5 1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 2.35 S11 |S11| 0.162717 0.160561 0.160153 0.157910 0.155640 0.152870 0.150710 0.148730 0.145840 0.143950 0.141980 0.140120 0.138450 0.137510 0.136570 0.134433 0.132707 0.131087 0.129567 0.128275 0.127137 0.125513 0.124020 0.122379 0.121234 0.120081 0.118817 0.116609 0.115374 0.113850 0.113120 0.112080 0.111350 0.110660 0.110070 0.109570 0.108940 0.107610 0.106800 0.106240 0.104410 0.103200 0.102820 0.101220 0.100260 0.098910 171.108 167.971 163.027 159.994 156.091 152.178 148.189 144.135 140.465 136.404 132.557 128.67 124.924 121.228 117.62 114.245 110.998 107.842 104.859 102.209 99.637 97.509 95.409 93.482 91.761 90.16 88.664 87.326 86.23 80.021 77.212 75.253 72.833 70.651 68.704 66.752 64.808 63.28 61.916 60.415 59.082 57.787 56.94 55.6 54.54 53.312 |S21| 11.479238 11.415032 11.337210 11.263950 11.200930 11.160790 11.096270 11.027770 10.957540 10.876040 10.785240 10.695820 10.604510 10.504830 10.400340 10.295550 10.186390 10.073620 9.965510 9.842290 9.725320 9.610100 9.485500 9.367530 9.251560 9.129800 9.011610 8.892430 8.772640 8.708890 8.598320 8.485180 8.379040 8.273700 8.167240 8.063390 7.958390 7.856150 7.751440 7.651320 7.553170 7.452840 7.354920 7.259510 7.163530 7.072340 S21 174.775 171.459 168.606 165.874 163.101 160.282 157.597 154.845 152.097 149.449 146.811 144.176 141.59 139.003 136.446 133.89 131.409 128.963 126.525 124.132 121.744 119.381 117.045 114.76 112.507 110.251 108.055 105.876 103.703 101.399 99.278 97.137 95.075 93.021 90.99 88.942 86.97 84.972 83.012 81.047 79.114 77.223 75.325 73.436 71.577 69.734 |S12| 0.069393 0.069131 0.068870 0.068640 0.068460 0.068400 0.068380 0.068210 0.068260 0.068090 0.068040 0.068000 0.067790 0.067690 0.067590 0.067520 0.067420 0.067380 0.067220 0.067050 0.066970 0.066930 0.066790 0.066840 0.066710 0.066685 0.066670 0.066687 0.066764 0.066970 0.067057 0.067090 0.067170 0.067200 0.067260 0.067320 0.067420 0.067460 0.067560 0.067600 0.067810 0.067960 0.067980 0.068230 0.068190 0.068480 S12 -1.296 -1.887 -2.702 -3.308 -3.908 -4.523 -5.134 -5.794 -6.391 -6.918 -7.57 -8.199 -8.743 -9.285 -9.831 -10.415 -10.866 -11.449 -11.901 -12.399 -12.949 -13.483 -13.882 -14.46 -14.928 -15.375 -15.818 -16.365 -16.815 -17.493 -17.963 -18.477 -18.984 -19.462 -19.938 -20.42 -20.891 -21.389 -21.917 -22.347 -22.888 -23.444 -23.91 -24.487 -24.984 -25.485 |S22| 0.106264 0.112247 0.118610 0.127240 0.134977 0.144410 0.154090 0.164250 0.174550 0.185240 0.195510 0.206040 0.216910 0.227810 0.238140 0.248290 0.258400 0.268360 0.277810 0.287510 0.297010 0.306110 0.314950 0.323700 0.332570 0.339940 0.348650 0.356290 0.360061 0.364627 0.369410 0.374600 0.380650 0.386070 0.391590 0.396600 0.402290 0.407630 0.412720 0.418620 0.423200 0.428690 0.433410 0.438440 0.442830 0.447010 S22 -133.221 -134.322 -135.449 -136.522 -137.648 -138.763 -139.895 -140.998 -142.085 -143.132 -144.211 -145.338 -146.461 -147.659 -148.902 -150.118 -151.55 -153.097 -154.786 -156.435 -158.367 -160.411 -162.397 -164.386 -166.443 -168.554 -170.582 -172.695 -174.724 -177.374 -179.169 179.129 177.406 175.7 174.044 172.328 170.798 169.234 167.75 166.176 164.723 163.19 161.75 160.241 158.869 157.463
MMG3013NT1 8 RF Device Data Freescale Semiconductor
Table 10. Class A Common Emitter S -Parameters at VCC = 5 Vdc, ICC = 90 mA, TC = 255C (continued)
f GHz 2.4 2.45 2.5 2.55 2.6 2.65 2.7 2.75 2.8 2.85 2.9 2.95 3 3.05 3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5 3.55 3.6 S11 |S11| 0.097870 0.096530 0.095360 0.094140 0.093150 0.092180 0.091130 0.090470 0.089850 0.088790 0.088180 0.087640 0.086490 0.087170 0.086660 0.086130 0.086330 0.086760 0.086510 0.086820 0.087230 0.087680 0.087990 0.088730 0.089200 52.576 51.814 50.69 49.939 49.177 48.019 47.141 46.394 45.454 44.657 44.083 43.291 42.549 42.041 41.37 41.387 41.301 41.239 41.638 41.81 42.12 42.727 43.424 44.082 45.12 |S21| 6.980770 6.892310 6.802480 6.719330 6.634260 6.554070 6.471630 6.392370 6.314980 6.238550 6.166300 6.088480 6.020040 5.950380 5.881680 5.814190 5.749680 5.684930 5.619060 5.557890 5.498110 5.437290 5.376810 5.319060 5.259990 S21 67.882 66.059 64.259 62.461 60.65 58.859 57.062 55.299 53.505 51.724 50.021 48.207 46.489 44.764 43.022 41.268 39.547 37.829 36.098 34.368 32.629 30.936 29.22 27.529 25.838 |S12| 0.068550 0.068780 0.068940 0.069120 0.069290 0.069490 0.069610 0.069850 0.070210 0.070340 0.070550 0.070750 0.071030 0.071280 0.071610 0.071920 0.072150 0.072340 0.072640 0.072800 0.073130 0.073490 0.073710 0.073970 0.074200 S12 -26.108 -26.694 -27.154 -27.644 -28.295 -28.971 -29.561 -30.111 -30.649 -31.402 -32.044 -32.738 -33.388 -34.097 -34.666 -35.528 -36.302 -36.943 -37.799 -38.546 -39.319 -40.144 -40.92 -41.673 -42.467 |S22| 0.451420 0.457800 0.460110 0.464930 0.469350 0.473140 0.477010 0.481850 0.485260 0.489440 0.494180 0.497180 0.501590 0.505070 0.509400 0.514040 0.518490 0.523620 0.525880 0.530230 0.534740 0.538080 0.542580 0.546650 0.550400 S22 155.974 154.6 153.074 151.617 150.014 148.442 146.825 145.214 143.56 141.782 140.078 138.23 136.357 134.738 132.754 130.875 128.954 126.955 124.995 123.081 121.057 119.195 117.253 115.36 113.481
MMG3013NT1 RF Device Data Freescale Semiconductor 9
1.7 7.62 0.305 diameter
3.48 5.33 1.27 1.27 0.86 0.64 3.86 0.58
2.49
2.54
Recommended Solder Stencil
NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH.
Figure 20. Recommended Mounting Configuration
MMG3013NT1 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
3 A 4
4.70 4.40 1.87 1.79
0.15 M C A B
B
0.60 0.40
2X R0.15 TYP 1.70 1.40
3
4
2.70 2.40
4.50 3.70
2X 4 TYP
1.30 0.70
5 0.48 0.38
1
2
3
2X
0.20 M C B
0.48 0.38 0.58 0.48
0.15 M C A B 0.15 M C A B
0.46 0.40
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. ALL DIMENSIONS ARE IN MILLIMETERS. 3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.5MM PER END. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.5MM PER SIDE. 4. DIMENSIONS ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD FLASH, BUT INCLUDING ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THE PLASTIC BODY. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
2X 4 TYP
E.P. 2X R0.20
4X 0.10 C
SEATING PLANE 1.50 1.50 1.65 1.55 C
0.65 0.55
1.35 1.25
STYLE 1: PIN 1. RF INPUT 2. GROUND 3. RF OUTPUT
CASE 1514-01 ISSUE C SOT -89 PLASTIC
BOTTOM VIEW
MMG3013NT1 RF Device Data Freescale Semiconductor 11
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MMG3013NT1 12
Document Number: MMG3013NT1 Rev. 2, 8/2005
RF Device Data Freescale Semiconductor


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